STW13NB60 sth13nb60fi n - channel 600v - 0.48 w - 13a - to-247/isowatt218 powermesh ? mosfet n typical r ds(on) = 0.48 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay ? process, stmicroelectronics has designed an advanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprietary edge termination structure, gives the lowest rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive ? internal schematic diagram january 2000 to-247 isowatt218 absolute maximum ratings symbol parameter value unit STW13NB60 sth13nb60fp v ds drain-source voltage (v gs = 0) 600 v v dgr drain- gate voltage (r gs = 20 k w ) 600 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c 13 8.6 a i d drain current (continuous) at t c = 100 o c 8.2 5.4 a i dm ( ) drain current (pulsed) 52 52 a p tot total dissipation at t c = 25 o c 190 80 w derating factor 1.52 0.64 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 4 4 v/ns v iso insulation withstand voltage (dc) ? 2000 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 13 a , di/dt 200 a/m s, v dd v (br)dss , tj t jmax type v dss r ds(on) i d STW13NB60 sth13nb60fi 600 v 600 v <0.54 w <0.54 w 13 a 8.6 a 1 2 3 1 2 3 1/9
thermal data to-247 isowatt218 r thj-case thermal resistance junction-case max 0.66 1.56 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 30 0.1 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 13 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 700 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 50 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 6.5 a 0.48 0.54 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 13 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 6.5 a 8 12 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 2600 325 30 pf pf pf STW13NB60 sth13nb60fi 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 300 v i d = 2.5 a r g = 4.7 w v gs = 10 v 27 13 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v i d = 13 a v gs = 10 v 58 15.5 23 82 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 480v i d = 13 a r g = 4.7 w v gs = 10 v 15 15 25 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 13 52 a a v sd ( * ) forward on voltage i sd =13 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 13 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c 630 6.8 22 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area for to-247 safe operating area for isowatt218 STW13NB60 sth13nb60fi 3/9
thermal impedance for to-247 output characteristics transconductance thermal impedance for isowatt218 transfer characteristics static drain-source on resistance STW13NB60 sth13nb60fi 4/9
gate charge vs gate-source voltage normalized gate threshold voltage vs temperature source-drain diode forward characteristics capacitance variations normalized on resistance vs temperature STW13NB60 sth13nb60fi 5/9
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STW13NB60 sth13nb60fi 6/9
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data STW13NB60 sth13nb60fi 7/9
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.210 0.222 c 3.3 3.8 0.130 0.149 d 2.9 3.1 0.114 0.122 d1 1.88 2.08 0.074 0.081 e 0.75 1 0.029 0.039 f 1.05 1.25 0.041 0.049 g 10.8 11.2 0.425 0.441 h 15.8 16.2 0.622 0.637 l1 20.8 21.2 0.818 0.834 l2 19.1 19.9 0.752 0.783 l3 22.8 23.6 0.897 0.929 l4 40.5 42.5 1.594 1.673 l5 4.85 5.25 0.190 0.206 l6 20.25 20.75 0.797 0.817 m 3.5 3.7 0.137 0.145 n 2.1 2.3 0.082 0.090 u4.6 0.181 l1 a c d e h g m f l6 123 u l5 l4 d1 n l3 l2 p025c isowatt218 mechanical data STW13NB60 sth13nb60fi 8/9
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this pu blication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . STW13NB60 sth13nb60fi 9/9
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